Search results for " AlGaN"

showing 3 items of 3 documents

Solar blind detectors based on AlGaN grown on sapphire

2005

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…

SiliconMaterials sciencebusiness.industryFlame DetectionPhotodetectorsSchottky diodePhotodetectorHeterojunctionultraviolet photodetectorsChemical vapor depositionGallium nitrideSettore ING-INF/01 - ElettronicaPhotodiodelaw.inventionResponsivitylawSapphireDetectivityOptoelectronicsSolar-blind detector UV detector AlGaNbusinessPhotodiodesMolecular beam epitaxyFilms
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High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2004

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep…

Materials sciencebusiness.industryAlloyDetectorPhase (waves)Schottky diodeengineering.materialEpitaxySettore ING-INF/01 - ElettronicaGanCondensed Matter::Materials ScienceOpticsSolar-blind detectors MBE MOCVD AlGaNengineeringOptoelectronicsMetalorganic vapour phase epitaxybusinessNoise-equivalent powerMolecular beam epitaxyMRS Proceedings
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Photodétecteurs UV à base GaAlN

2004

UV photodetectors AlGaNSettore ING-INF/01 - Elettronica
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